Listar División de Nanociencias y Materiales por autor "Escobosa Echavarria, Arturo"
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High-quality InN films on MgO (100) substrates: the key role of 30 degrees in-plane rotation
Compeán García, Vicente Damián; Orozco Hinostroza, Ignacio Everardo; Escobosa Echavarria, Arturo; López Luna, Edgar; Rodríguez Vázquez, Angel Gabriel (2014-05)"High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer ...