Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells
Orozco Hinostroza, Ignacio Everardo
Ávalos Borja, Miguel
Compeán García, Vicente Damián
Cuellar Zamora, C.
Rodríguez Vázquez, Angel Gabriel
López Luna, Edgar
Vidal Borbolla, Miguel Ángel
"Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10 nm was grown; this quantum wells width decrease the segregation effect of In. Photoluminescence emission produced four different emission signals: violet, blue, green-yellow and red. Thus, we were able to tune energy transitions in the visible spectrum modifying the In concentration in cubic InxGa1?xN ternary alloy."
KeywordsA3. Quantum wells
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
B3. Heterojunction semiconductor devices