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Title

Termination of hollow core nanopipes in GaN by an AlN interlayer

dc.contributor.authorContreras López, Oscar Edel
dc.contributor.authorRuíz Zepeda, Francisco
dc.contributor.authorÁvalos Borja, Miguel
dc.contributor.authorDadgar, Armin
dc.contributor.authorKrost, Alois
dc.date.accessioned2019-08-09T22:22:45Z
dc.date.available2019-08-09T22:22:45Z
dc.date.issued2016
dc.identifier.citationO. Contreras, F. Ruiz-Zepeda, M. Avalos-Borja, A. Dadgar, A. Krost, Termination of hollow core nanopipes in GaN by an AlN interlayer, Journal of Crystal Growth, Volume 455, 2016, Pages 43-48.
dc.identifier.urihttp://hdl.handle.net/11627/5037
dc.description.abstract"Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations revealed that dislocations had an empty core and that an AlN interlayer is suited to block their propagation. The termination mechanism is discussed in terms of strain and kinetic growth factors, which may affect the creation and propagation of nanopipes. According to the observations, it is proposed that either step pinning or lateral overgrowth occurring at the proximity of the defect assists in capping the nanopipe."
dc.publisherElsevier
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectNanostructures
dc.subjectTEM
dc.subjectNanopipes
dc.subjectMetal Organic Vapor Phase Epitaxy
dc.subjectGaN
dc.subjectSemiconducting III-V materials
dc.subject.classificationFÍSICA
dc.titleTermination of hollow core nanopipes in GaN by an AlN interlayer
dc.typearticle
dc.identifier.doihttps://doi.org/10.1016/j.jcrysgro.2016.09.027
dc.rights.accessAcceso Abierto


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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internacional